2SC1945

2SC1945 Mitsubishi RF Power Transistor

2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.

2SC1945 manufactured from Mitsubishi Electric

2SC1945 specification :
High Gain Gpe> 14.5dB, VCC = 12V, Po = 14W, f = 27MHz, TO-220

for download datasheet of 2SC1945
Download Datasheet 2SC1945

2SC2538

2SC2538 Mitsubishi RF Power Transistor

2SC2538 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.

2SC2538 manufactured from Mitsubishi Electric

2SC2538 specification :
High Gain Gpe> 10dB, VCC = 13,5V, Po = 0.5W, f = 175MHz, TO-92

for download datasheet of 2SC2538
Download Datasheet 2SC2538

2SC2053

2SC2053 Mitsubishi RF Power Transistor

2SC2053 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.

2SC2053 manufactured from Mitsubishi Electric

2SC2053 specification :
High Gain Gpe> 15.7dB, VCC = 13,5V, Po = 0.15W, f = 175MHz, TO-92

Download Datasheet 2SC2053

2SC1970

2SC1970 Mitsubishi RF Power Transistor

2SC1970 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.

2SC1970 manufactured from Mitsubishi Electric


2SC1970 specification :
High Gain Gpe> 9.2dB, VCC = 13,5V, Po = 1W, f = 175MHz, TO-220

for download datasheet of 2SC1970
Download Datasheet 2SC1970

2SC1969

2SC1969 Mitsubishi RF Power Transistor

2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.

2SC1969 manufactured from Mitsubishi Electric

2SC1969 specification :
High Gain Gpe> 12dB, VCC = 12V, Po = 16W, f = 27MHz, TO-220

for dowload datasheet of 2sc1969
Download Datasheet 2SC1969

2SC2694

2SC2694 Mitsubishi RF Power Transistor

2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.

2SC2694 manufactured from Mitsubishi Electric

2SC2694 specification :
High power Gain Gpe> 6.7dB, VCC = 12.5V, Po = 70W, f = 175MHz, TO-40

for download 2SC2694datasheet
Download Datasheet 2SC2694

2SC2166

2SC2166 Mitsubishi RF Power Transistor

2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.

2SC2166 manufactured from Mitsubishi Electric

2SC2166 specification :
High Gain Gpe> 13.8dB, VCC = 12V, Po = 6W, f = 27MHz, TO-220

for download 2SC2166 datasheet
Download Datasheet 2SC2166

2SC1971

2SC1971 Mitsubishi RF Power Transistor

2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.

2SC1971 manufactured from Mitsubishi Electric

2SC1971 specification :
High Gain Gpe> 10dB, VCC = 13,5V, Po=6W, f=175MHz, TO-220

for download 2SC1971 Datasheet Download Datasheets 2SC1971