2SC2053 Mitsubishi RF Power Transistor
2SC2053 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.
2SC2053 manufactured from Mitsubishi Electric
2SC2053 specification :
High Gain Gpe> 15.7dB, VCC = 13,5V, Po = 0.15W, f = 175MHz, TO-92
Download Datasheet 2SC2053
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