2SC1969 Mitsubishi RF Power Transistor
2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.
2SC1969 manufactured from Mitsubishi Electric
2SC1969 specification :
High Gain Gpe> 12dB, VCC = 12V, Po = 16W, f = 27MHz, TO-220
for dowload datasheet of 2sc1969
Download Datasheet 2SC1969
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