2SC1970 Mitsubishi RF Power Transistor
2SC1970 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.
2SC1970 manufactured from Mitsubishi Electric
2SC1970 specification :
High Gain Gpe> 9.2dB, VCC = 13,5V, Po = 1W, f = 175MHz, TO-220
for download datasheet of 2SC1970
Download Datasheet 2SC1970
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