2SC2694 Mitsubishi RF Power Transistor
2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.
2SC2694 manufactured from Mitsubishi Electric
2SC2694 specification :
High power Gain Gpe> 6.7dB, VCC = 12.5V, Po = 70W, f = 175MHz, TO-40
for download 2SC2694datasheet
Download Datasheet 2SC2694
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