2SC1971 Mitsubishi RF Power Transistor
2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on VHF Band mobile radio applications.
2SC1971 manufactured from Mitsubishi Electric
2SC1971 specification :
High Gain Gpe> 10dB, VCC = 13,5V, Po=6W, f=175MHz, TO-220
for download 2SC1971 Datasheet
Download Datasheets 2SC1971
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