2SC2166 Mitsubishi RF Power Transistor
2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.
2SC2166 manufactured from Mitsubishi Electric
2SC2166 specification :
High Gain Gpe> 13.8dB, VCC = 12V, Po = 6W, f = 27MHz, TO-220
for download 2SC2166 datasheet
Download Datasheet 2SC2166
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