2SC1945 Mitsubishi RF Power Transistor
2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF Power amplifier on HF Band mobile radio applications.
2SC1945 manufactured from Mitsubishi Electric
2SC1945 specification :
High Gain Gpe> 14.5dB, VCC = 12V, Po = 14W, f = 27MHz, TO-220
for download datasheet of 2SC1945
Download Datasheet 2SC1945
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